PLASMA PROCESSOR AND METHOD OF CALIBRATING MEANS FOR VARIABLE IMPEDANCE

摘要

PROBLEM TO BE SOLVED: To provide a plasma processor capable of optimally adjusting the condition of a plasma so as to maintain high uniformity of the plasma processing within the surface to be processed in a simple structure.

SOLUTION: The plasma processor comprises an upper electrode 6 and a lower electrode 18 which serves as a substrate loading table inside a processing chamber 4 which can be evacuated, wherein a plasma is generated by applying a high-frequency voltage from a high-frequency power source 14 connected to at least one of the upper electrode and the lower electrode via a matching circuit 12 to carry out a prescribed plasma processing to an object W placed on the lower electrode. This plasma processor is furnished with a means 30 for variable impedance interposed in the high-frequency line connected to either one of the electrodes and capable of varying the impedance seen from the other electrode that faces the electrode to which the high-frequency line is connected, and an impedance control unit 32 for controlling the impedance via the means for a variable impedance.

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