发明名称 SEMICONDUCTOR SUBSTRATE, METHOD OF MANUFACTURING THE SAME, ELECTROOPTIC DEVICE, AND ELECTRONIC EQUIPMENT
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor substrate provided with a constitution that hardly generates light leaking currents in an active layer. <P>SOLUTION: This semiconductor substrate 600 is provided with a semiconductor device 620 formed on a supporting substrate 500 through a first insulating layer 550 and a first light shielding layer 530 interposed between the device 620 and the substrate 500. The semiconductor device 620 is provided with a laminated film containing a second insulating layer 210 between two semiconductor layers 220 and 240. The upper semiconductor layer 220 formed on the second insulating layer 210 works as the active layer of the semiconductor device 620 and the lower semiconductor layer 240 formed under the insulating layer 210 works as a second light shielding layer. Therefore, light is hardly made incident to the active layer 220. <P>COPYRIGHT: (C)2004,JPO
申请公布号 JP2004095621(A) 申请公布日期 2004.03.25
申请号 JP20020251123 申请日期 2002.08.29
申请人 SEIKO EPSON CORP 发明人 SAITO JUN
分类号 G02F1/1335;G02F1/1368;H01L21/02;H01L27/12;H01L29/786 主分类号 G02F1/1335
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