| 摘要 |
A method for fabricating a polysilicon layer includes (a) providing a substrate; (b) forming a barrier layer on the substrate; (c) forming a porous layer on the barrier layer; (d) forming an amorphous silicon layer on the porous layer; and (e) performing laser annealing process. Additionally, a stress buffer layer can form between the barrier layer and the porous layer. Due to the low thermal conductivity of the porous layer, the polysilicon layer having larger grain size is formed.
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