发明名称 |
Fast gas exchange for thermal conductivity modulation |
摘要 |
A method for thermally processing a semiconductor substrate comprises: heating the substrate to a target peak temperature while controlling the gas pressure in the processing chamber at a pressure level that is significantly lower than atmospheric pressure; providing a flow of a purge gas between the substrate and a thermal reservoir at or near the time the substrate temperature reaches the target peak temperature while adjusting the gas pressure in the processing chamber to a second pressure level. Preferably, the purge gas has a relatively high thermal conductivity.
|
申请公布号 |
US2004058560(A1) |
申请公布日期 |
2004.03.25 |
申请号 |
US20020251485 |
申请日期 |
2002.09.20 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
RANISH JOSEPH;JENNINGS DEAN;HAAS BRIAN |
分类号 |
C23C16/44;C23C16/48;F27B17/00;F27D19/00;F27D21/00;H01L21/00;H01L21/324;(IPC1-7):H01L21/26;H01L21/477 |
主分类号 |
C23C16/44 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|