发明名称 MASK, ALIGNER, AND EXPOSURE METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a method for efficiently controlling a plurality of masks, in an aligner and an exposure method for performing photolithography while controlling the plurality of masks. <P>SOLUTION: On the surface of each mask (including a pattern original plate and a reticle), a discrimination code (bar code) 14 of a mask is attached. The discrimination code 14 is composed of a high scattering part where the reflection-scattering degree of probe light irradiated to the discrimination code 14 is high and a low scattering part where the reflection-scattering degree is low. The low scattering part is composed of a flat region of the mask surface, and the high scattering part is composed of an edge group formed on the mask surface, namely, is composed of a region where L/S are formed with a line width/ pitch intervals equal to or less than a resolution limit of an optical system for reading the reflection light of probe light irradiated by the bar code, or a region where an edge group having a two-dimentional zigzag pattern is formed. <P>COPYRIGHT: (C)2004,JPO
申请公布号 JP2004095924(A) 申请公布日期 2004.03.25
申请号 JP20020256347 申请日期 2002.09.02
申请人 NIKON CORP 发明人 UDAGAWA HITOSHI;OKINO TERUAKI;HIRAYANAGI NORIYUKI
分类号 G03F1/20;G03F1/38;G03F7/20;H01L21/027 主分类号 G03F1/20
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