METHOD FOR FILM FORMATION, FILM, ELEMENT, ALKOXY SILICON COMPOUND, AND FILM FORMATION EQUIPMENT

摘要

PROBLEM TO BE SOLVED: To provide a technique capable of forming a desired mixed film containing Si, C, and O with an optional rate with favorable replicability. SOLUTION: A method for forming a film of a composition containing Si and O forms the film of the composition containing Si and O on a base body arranged in a reaction chamber 1 by including vapor of alkoxy silicon compound in the reaction chamber 1 having heated thermal filaments 2a and 2b. COPYRIGHT: (C)2004,JPO