发明名称 |
SUBSTRATE SURFACE TREATMENT METHOD AND APPARATUS |
摘要 |
PROBLEM TO BE SOLVED: To solve the problem of deterioration and a short circuit of wiring caused by ion migration due to further decrease of pitch between electrodes formed on an IC chip along with high integration of a circuit within the IC ship. SOLUTION: High-frequency waves of 100 W (power density of 0.32 W/cm<SP>2</SP>) are applied to a high frequency electrode 16 while vacuum degree in a reaction chamber 12 is maintained at 120 Pa to generate CF<SB>4</SB>gas plasma. A module substrate 15 is treated with the generated CF<SB>4</SB>gas plasma to form a fluorine-containing film efficiently. A surface of the module substrate 15 is coated with the a fluorine-containing film, thus corrosion of gold or copper wiring and the ion migration between substrate electrodes 9 of an FPC 2 are prevented. COPYRIGHT: (C)2004,JPO
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申请公布号 |
JP2004089848(A) |
申请公布日期 |
2004.03.25 |
申请号 |
JP20020254325 |
申请日期 |
2002.08.30 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
SUZUKI NAOKI;TOMITA KAZUYUKI;NISHIKAWA EISHIN;OTANI HIROYUKI;TOKUNAGA MINEO;OKANO YUKO |
分类号 |
B08B5/00;B08B7/00;H05K3/26;(IPC1-7):B08B5/00 |
主分类号 |
B08B5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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