| 摘要 |
As an embodiment of the element structure, a structure including, from the downside, a sapphire C-plane substrate 1, a GaN buffer layer 11 grown at a low temperature, an un-doped GaN layer 12, an Si-doped n-GaN contact layer 21, a light emitting layer 3 of a multiple quantum well structure (MQW) having plural well layers, an Mg-doped p-AlGaN cladding layer 22, and an Mg-doped p-GaN contact layer 23 is mentioned. The above-mentioned light emitting layer 3 is capable of multi-wavelength light emission by a multi-layer structure emitting light having at least two peaks in an emission spectrum, which is achieved by, for example, forming plural groups having different band gaps of the well layer. As a result, a light having plural wavelengths is emitted from a single light emitting layer, and by simply injecting current into a pair of p-type and n-type electrodes, a light emitting element emitting multicolor light, particularly white light, can be provided.
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