发明名称 |
Structure and method of forming bitline contacts for a vertical dram array using a line bitline contact mask |
摘要 |
A bitline contact and method of forming bitline contact for a vertical DRAM array using a bitline contact mask. In the method, gate conductor lines are formed. An oxide layer is deposited over the gate conductor lines, and a bitline contact mask is formed over portions of the oxide layer. The bitline contact mask is etched, and a silicon layer is deposited on the substrate. A bitline layer is deposited on the silicon layer. A masking and etching operation is performed on the bitline layer. A M0 metal is deposited over the silicon layer and on sides of non etched portions of the bitline (M0) layer to form left and right bitlines.
|
申请公布号 |
US2004058480(A1) |
申请公布日期 |
2004.03.25 |
申请号 |
US20030667308 |
申请日期 |
2003.09.23 |
申请人 |
NESBIT LARRY A.;FALTERMEIER JOHNATHAN E.;DIVAKARUNI RAMACHANDRA;BERGNER WOLFGANG |
发明人 |
NESBIT LARRY A.;FALTERMEIER JOHNATHAN E.;DIVAKARUNI RAMACHANDRA;BERGNER WOLFGANG |
分类号 |
H01L21/768;H01L21/28;H01L21/60;H01L21/8242;H01L27/108;(IPC1-7):H01L21/82 |
主分类号 |
H01L21/768 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|