| 摘要 |
PURPOSE: A method for manufacturing a mask ROM(Read Only Memory) cell is provided to prevent out-diffusion due to a buried junction and to easily control channel by using a core gate mask. CONSTITUTION: A field oxide layer is formed on a substrate(200) for defining a mask ROM cell region and a peripheral region. A buried junction(203) is formed by implanting dopants into the mask ROM cell region. A buried oxide layer(204) is then formed on the buried junction. A mask ROM gate is formed at the mask ROM cell region using a core gate mask. A mask ROM channel is formed by implanting dopants into the mask ROM gate. Then, a gate electrode and an insulating layer are sequentially formed on the resultant structure. A metal film is formed on the insulating layer.
|
