| 摘要 |
PURPOSE: A metal erosion prevention method in metal etching is provided to prevent erosion of metal by removing remaining Cl- ions using H2O-based plasma. CONSTITUTION: A photoresist pattern is formed on a metal film. The metal film is etched by Cl2-based plasma using the photoresist pattern as a mask, thereby forming a metal line(202). At this time, Cl- residues are generated. The photoresist pattern is removed by using O2-based plasma. Then, the metal line is treated by passivation using H2O-based plasma. At this time, the remaining Cl- ions are simultaneously removed.
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