METHOD FOR MANUFACTURING SPLIT GATE TYPE FLASH MEMORY DEVICE

摘要

PURPOSE: A method for manufacturing a split gate type flash memory device is provided to be capable of forming a floating gate pattern without forming misalignment and approximity effect. CONSTITUTION: A trench isolation layer(58) is formed on a semiconductor substrate for defining a plurality of first active regions(62a) and a plurality of second active regions(62b). Floating gate patterns(64) spaced apart from each other are formed on the first active regions(62a) by etching a conductive pattern using an oxide pattern as a mask. A tunnel oxide layer is formed at both sidewalls of the floating gate patterns(64). A plurality of control gate electrodes are formed on the floating gate patterns.