| 摘要 |
PURPOSE: A method for forming a MOS transistor is provided to remove polymers generated in dry-etching of a screen oxide layer by using an ashing process. CONSTITUTION: A gate(103) is formed on a substrate(100) having an isolation layer. A spacer(104) is formed at both sidewalls of the gate and an ashing process is carried out. Then, an LDD region(105) is formed in the substrate. A screen layer is formed on the resultant structure. A source/drain region(107) is formed using a screen layer. The screen layer is then removed and an ashing process is carried out. Then, a silicide layer(109) is formed on the gate and the source/drain region.
|
