METHOD FOR FORMING SUBMICRON PATTERN USING OXIDE HARD MASK

摘要

PURPOSE: Provided is a method for forming a submicron pattern using an oxide hard mask, which ensures a margin in an etch process to prevent a metal top notch or a metal line attack and forms a submicron pattern of 0.1 micrometer or less. CONSTITUTION: The method comprises the steps of: depositing aluminum on a bottom oxide layer(10) and coating a photoresist on the deposited aluminum; applying an SOG(Spin On Glass) on the coated photoresist to cure the bottom oxide layer; performing oxide etch back to expose the photoresist; removing the photoresist by a dry/wet ash and performing metal etch by using the oxide as a hard mask(50); and forming a metal line(45) on the bottom oxide layer, in which the width of the metal line is controlled freely.