INDUCTIVELY COUPLED PLASMA TREATMENT APPARATUS

摘要

PURPOSE: An inductively coupled plasma treatment apparatus is provided to improve productivity and maintenance by forming a Faraday shield between an upper and lower dielectric film. CONSTITUTION: An inductively coupled plasma treatment apparatus includes a processing chamber(5), an upper dielectric film(7) for covering the upper surface of the processing chamber, an antenna(11) formed at one side of the upper dielectric film for applying RF power, a lower dielectric film(18), and a Faraday shield(30). The process chamber(5) further includes a holder(3) for loading a substrate(1). The Faraday shield(30) is located between the upper and lower dielectric film for restraining capacitive coupling between the antenna and plasma.