SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: To provide a MOS transistor which can reduce gate overlap capacitance while not reducing a drive current thereof. CONSTITUTION: A double-angle smile oxide structure can be obtained by designing a gate electrode 22 to have the curved structure with its side surface spread toward the upper part and by forming a thick end edge portion of a gate oxide film 21 through re-oxidation. The gate overlap capacitance can be reduced while not reducing the drive current by setting impurity concentration of the source/drain layer under the double-angle smile oxidation structure(area surrounding the point B) to the range of 4 x 10¬18cm¬-3±40%.