| 摘要 |
PURPOSE: A multi bank semiconductor memory device having an improved structure is provided to reduce its area by reducing the number of fuse programmable decoders. CONSTITUTION: A multi bank semiconductor memory device comprises a plurality of banks(110) each of which includes normal memory cells and redundancy memory cells(111) repairing the normal memory cells. Each bank comprises a plurality of fuse programmable decoders(311,312,313,314) outputting a control signal when an address corresponding to a defective cell and being programmed in advance is inputted, and a plurality of redundancy word line drivers(211,212,213,214,215,216) which are connected to the fuse programmable decoders respectively and enables a word line of the redundancy memory cells by being driven by the control signal. Each fuse programmable decoder outputs the control signal to the redundancy word line driver of an adjacent bank.
|
