METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to simplify the process and to reduce the manufacturing cost by simultaneously forming an LDD region and a source/drain region using a single ion-implantation process. CONSTITUTION: A cap oxide layer(202) is formed on a gate(204). An oxide spacer(206) is formed at both sidewalls of the gate. Then, N/P source/drain implantation processing is performed, thereby simultaneously forming an LDD(Lightly Doped Drain) region(210) at the lower portion of the oxide spacer and a source/drain region at the lower portion of the gate.