发明名称 Light-emitting apparatus
摘要 The present invention is to solve the problems of heat release and a metal material corrosion due to fluorine that are arisen in the case of using a film containing fluoroplastics (Teflon®) (113) as a protective film for a light-emitting device. In the present invention, an inorganic film (112) is formed after forming a light-emitting device, and a film containing fluoroplastics (113) is formed thereon for avoiding contact with a metal material for forming the light-emitting device, as a result, a metal material corrosion due to fluorine in the film containing fluoroplastics can be prevented. In addition, the inorganic insulating film has a function of preventing fluorine in the film containing fluoroplastics from reacting to the metal material (barrier property), in addition, the inorganic insulating film is formed of a material having high heat conductivity for releasing heat generated in a light-emitting device.
申请公布号 EP1401032(A2) 申请公布日期 2004.03.24
申请号 EP20030021328 申请日期 2003.09.19
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI, SHUNPEI;TAKAYAMA, TORU;TSURUME, TAKUYA;GOTO, YUUGO
分类号 H05B33/04;H01L27/32;H01L51/50;H01L51/52;H05B33/10 主分类号 H05B33/04
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