SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: To provide a semiconductor device and a manufacturing method thereof in which a transistor is made finer in the semiconductor device having a field effect transistor equipped with a gate insulating film and a manufacturing method thereof. CONSTITUTION: In the semiconductor device including a plurality of element areas and an element isolation region using shallow trench isolation(STI) for electrically isolating the element regions, each element area is provided with a channel region, source-drain regions formed while horizontally holding the channel region in between, the gate insulating film which is formed on the channel region and formed from the side of the element isolation region oppositely to a surface confronted with the channel area in a horizontal direction approximately vertical with a direction of the source-drain regions holding the channel region in between and in which a bird's beak is <= 1°, and a gate electrode layer formed on the gate insulating film.