HELIUM ERROR PREVENTION METHOD IN METAL ETCHING

摘要

PURPOSE: A helium error prevention method in metal etch processing is provided to easily remove particles existing at back surface of a wafer by cleaning the back surface using DI(Deionized) water. CONSTITUTION: A metal film is deposited on a wafer(202) by sputtering. At this time, particles(202) are generated on the back surface of the wafer(202). The particles(202) are removed by spraying DI water using a nozzle(206). A metal line is formed by patterning the metal film. The surface of the wafer(202) is then cooled by using helium gas. Also, the particles(202) are removed by scrubbing the back surface of the wafer using a brush.