Waveguide-type semiconductor optical device and process of fabricating the same

摘要

A waveguide-type semiconductor optical device (20) having a pin-type junction formed on a semi-insulating substrate (1) by a metal-organic vapor phase epitaxial growth process (MOVPE). The pin-type junction consists of an n-type cladding layer (2), an i-type absorption layer (4), and a p-type cladding layer (6). The waveguide-type semiconductor optical device has an impurity concentration not higher than 10<16> cm<-3> in the i-type absorption layer.