SEMICONDUCTOR DEVICE

摘要

PURPOSE: To provide a semiconductor device that prevents contact failures in an upper electrode and the occurrence of an area penalty. CONSTITUTION: The semiconductor device comprises lower storage nodes 10a-10d provided on a main surface 1a of a silicon substrate 1; a dielectric film 15 provided on the lower storage nodes 10a-10d; an upper cell plate electrode 11 provided on the dielectric film 15; and an interlayer insulating film 3 for covering the upper cell plate electrode 11. The upper cell plate electrode 11 contains ruthenium. The interlayer insulating film 3 has a contact hole 21a, reaching the upper cell plate electrode 11. The contact hole 21a is provided so that distance from the main surface 1a of the silicon substrate 1 to the bottom surface 21m of the contact hole 21a is set to be at least distance from the main surface 1a of the silicon substrate 1 to the bottom surface 11m of the upper cell plate electrode 11.