METHOD FOR FORMING TUNGSTEN PLUG OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a tungsten plug of a semiconductor device is provided to prevent voids by previously forming a TiN liner before forming a contact hole. CONSTITUTION: An interlayer dielectric(22) is formed on a silicon substrate(20). A TiN liner(24) is formed on the interlayer dielectric. A contact hole is formed by selectively etching the TiN liner and the interlayer dielectric. A glue layer is formed on the resultant structure. A tungsten film is filled in the contact hole. The tungsten film and the glue layer are partially removed by CMP(Chemcial Mechanical Polishing). Then, a metal interconnection is formed.