| 摘要 |
A method for disposing metal wiring on the surface of an insulating film formed on a semiconductor substrate. A recess is formed in the insulating film, and a metal wiring film composed of a metal wiring material is laminated on the insulating film having the recess formed therein. Further, the metal wiring film laminated on a surface area outside the recess in the insulating film is selectively removed. Thereafter, the metal wiring film laminated above the recess is polished by chemical mechanical polishing.
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