发明名称 |
Method for forming variable-K gate dielectric |
摘要 |
A method for forming a gate dielectric having regions with different dielectric constants. A low-K dielectric layer is formed over a semiconductor structure. A dummy dielectric layer is formed over the low-K dielectric layer. The dummy dielectric layer and low-K dielectric layer are patterned to form an opening. The dummy dielectric layer is isontropically etched selectively to the low-K dielectric layer to form a stepped gate opening. A high-K dielectric layer is formed over the dummy dielectric and in the stepped gate opening. A gate electrode is formed on the high-K dielectric layer.
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申请公布号 |
US6709934(B2) |
申请公布日期 |
2004.03.23 |
申请号 |
US20020196111 |
申请日期 |
2002.07.16 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING LTD |
发明人 |
LEE JAMES YONG MENG;LEUNG YING KEUNG;PRADEEP YELEHANKA RAMACHANDRAMURTHY;ZHENG JIA ZHEN;CHAN LAP;QUEK ELGIN;SUNDARESAN RAVI;PAN YANG |
分类号 |
H01L29/43;H01L21/28;H01L21/336;H01L29/423;H01L29/49;H01L29/51;H01L29/78;(IPC1-7):H01L21/336 |
主分类号 |
H01L29/43 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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