发明名称 |
Method and apparatus for repairing lithography masks using a charged particle beam system |
摘要 |
A method of repairing opaque defects in lithography masks entails focused ion beam milling in at least two steps. The first step uses a large pixel spacing to form multiple holes in the defect material, with the milled area extending short of the defect material edge. The final step uses a pixel spacing sufficiently close to produce a smooth floor on the milled area, and extends to the edge of the defect. During the second step, an etch enhancing gas such as bromine is preferably used.
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申请公布号 |
US6709554(B2) |
申请公布日期 |
2004.03.23 |
申请号 |
US20010802342 |
申请日期 |
2001.03.09 |
申请人 |
FEI CO |
发明人 |
FERRANTI DAVID C;SZELAG SHARON M;CASEY JR J DAVID |
分类号 |
G03F1/08;G03F1/00;H01J27/26;H01J37/08;H01J37/305;H01J37/317;H01L21/302;(IPC1-7):C23C14/34;C23F1/00 |
主分类号 |
G03F1/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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