| 摘要 |
A semiconductor memory with multiple timing loops for optimizing memory access operations. A clock generator circuit is provided for generating an internal memory clock based on an external clock or an input signal transition supplied to the memory device. The internal memory clock is operable to provide a timing reference with respect to a memory access operation based on a plurality of address signals. A timing loop selector is operable to select a particular timing loop responsive to at least one access margin signal. A shutdown circuit generates an access shutdown signal based on the selected timing loop that is optimized for a memory device of particular size, speed, etc.
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