Tunneling magnetoresistive head and a process of tunneling magnetoresistive head

摘要

There is proposed a high-sensitive TMR element wherein the selection of electronic state contributing to tunnel conduction is optimized. In this invention, a junction plane between a ferromagnetic layer (210) having a bcc structure and a tunnel barrier layer (310) is constituted by (211) plane or (110) plane of the ferromagnetic layer (210). The tunnel barrier layer (310) is formed of a thin aluminum oxide film which is formed through two stages, i.e. a first stage wherein an aluminum film having a thickness of 1 nm or less is formed on the surface of a magnetic metal by taking advantage of the excellent wettability of aluminum to the surface of metallic film, the resultant aluminum film being subsequently naturally oxidized or oxidized by oxygen radical; and a second stage wherein an aluminum thin film is formed directly from an aluminum flux in an oxygen atmosphere or an atmosphere of oxygen radical.