发明名称 |
Semiconductor memory device using ferroelectric film |
摘要 |
Each memory cell has a cell transistor and a ferroelectric capacitor connected in parallel between a source and drain terminals of this cell transistor. The ferroelectric capacitor has a bottom electrode and a top electrode and a contact connects the top electrode and one of a source and drain terminals of the cell transistor. This contact is arranged at the position offset from the interval of the bottom electrodes.
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申请公布号 |
US6710386(B2) |
申请公布日期 |
2004.03.23 |
申请号 |
US20030456563 |
申请日期 |
2003.06.09 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
TAKASHIMA DAISABURO |
分类号 |
G11C14/00;H01L21/8246;H01L27/10;H01L27/105;H01L27/115;(IPC1-7):H01L31/062 |
主分类号 |
G11C14/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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