发明名称 |
Substrate including wide low-defect region for use in semiconductor element |
摘要 |
In a process for producing a substrate for use in a semiconductor element: a porous anodic alumina film having a great number of minute pores is formed on a surface of a base substrate; the surface of the base substrate is etched by using the porous anodic alumina film as a mask so as to form a great number of pits on the surface of the base substrate; the porous anodic alumina film is removed; and a GaN layer is formed on the surface of the base substrate by crystal growth.
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申请公布号 |
US6709513(B2) |
申请公布日期 |
2004.03.23 |
申请号 |
US20020188038 |
申请日期 |
2002.07.03 |
申请人 |
FUJI PHOTO FILM CO., LTD. |
发明人 |
FUKUNAGA TOSHIAKI;KUNIYASU TOSHIAKI;WADA MITSUGU;HOTTA YOSHINORI |
分类号 |
C30B25/02;C30B25/18;H01L21/20;(IPC1-7):C30B25/04 |
主分类号 |
C30B25/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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