发明名称 |
Multiple quantum well semiconductor optical modulator |
摘要 |
A quantum-confined Stark effect semiconductor optical modulator, operable to modulate light of a particular wavelength in the range of around 780 to 840 nm. A p-i-n diode having p, intrinsic and n regions, as well as first and second electrical contacts for application of a reverse bias voltage defines the modulator. The particular intrinsic region includes a plurality of semiconductor layers defining a plurality of quantum wells separated by barrier layers having a certain bandgap energy above that of the quantum wells. The quantum wells including at least two ultra-thin barrier layers within the quantum well and being of a material having a certain bandgap energy above that of the quantum wells. The width of each ultra-thin barrier layer is no more than approximately two molecular layers thick.
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申请公布号 |
US6710367(B1) |
申请公布日期 |
2004.03.23 |
申请号 |
US20020146944 |
申请日期 |
2002.05.17 |
申请人 |
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE ARMY |
发明人 |
BRUNO JOHN D.;TOBIN MARY S. |
分类号 |
G02F1/015;G02F1/017;(IPC1-7):H01L29/06 |
主分类号 |
G02F1/015 |
代理机构 |
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地址 |
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