发明名称 Semiconductor integrated circuit having a gate array structure
摘要 In a semiconductor integrated circuit having a gate array structure, within a cell, isolation transistors are disposed in series between an intra-cell gate output terminal and an intra-cell power supply wiring section, or between the intra-cell gate output terminal and an intra-cell ground wiring section. Isolation transistors are disposed in series between an extra-cell gate output terminal and an extra-cell power supply wiring section between cells, or between the extra-cell gate output terminal and an extra-cell ground wiring section.
申请公布号 US6710625(B2) 申请公布日期 2004.03.23
申请号 US20020152007 申请日期 2002.05.22
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 UNEME YUTAKA;NAGASAWA HIDEAKI
分类号 H01L21/822;H01L21/82;H01L27/04;H01L27/118;H03K19/173;H03K19/177;(IPC1-7):H03K19/177;H03K19/00 主分类号 H01L21/822
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