发明名称 |
Semiconductor integrated circuit having a gate array structure |
摘要 |
In a semiconductor integrated circuit having a gate array structure, within a cell, isolation transistors are disposed in series between an intra-cell gate output terminal and an intra-cell power supply wiring section, or between the intra-cell gate output terminal and an intra-cell ground wiring section. Isolation transistors are disposed in series between an extra-cell gate output terminal and an extra-cell power supply wiring section between cells, or between the extra-cell gate output terminal and an extra-cell ground wiring section.
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申请公布号 |
US6710625(B2) |
申请公布日期 |
2004.03.23 |
申请号 |
US20020152007 |
申请日期 |
2002.05.22 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
UNEME YUTAKA;NAGASAWA HIDEAKI |
分类号 |
H01L21/822;H01L21/82;H01L27/04;H01L27/118;H03K19/173;H03K19/177;(IPC1-7):H03K19/177;H03K19/00 |
主分类号 |
H01L21/822 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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