发明名称 Surface acoustic wave device and substrate thereof
摘要 Provided are a substrate for a surface-acoustic-wave device and a surface-acoustic-wave device, in which an intermediate layer for controlling crystal characteristics of a piezoelectric layer does not easily separate from a diamond layer.A surface-acoustic-wave device substrate 20 and a surface-acoustic-wave device 10, according to the present invention, comprises a diamond layer 22, an intermediate layer 24 disposed on the diamond layer 22, and a piezoelectric layer 26 disposed on the intermediate layer 24, the piezoelectric layer 26 being made of LiNbO3 or LiTaO3, the intermediate layer 24 being made of AlN.
申请公布号 US6710513(B2) 申请公布日期 2004.03.23
申请号 US20020203423 申请日期 2002.08.08
申请人 SEIKO EPSON CORPORATION 发明人 NAKAHATA HIDEAKI;HACHIGO AKIHIRO;TATSUMI NATSUO;IMAI TAKAHIRO;SHIKATA SHINICHI
分类号 H03H9/25;H03H9/02;(IPC1-7):H03H9/25 主分类号 H03H9/25
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