发明名称 |
Semiconductor device having silicon-rich layer and method of manufacturing such a device |
摘要 |
A semiconductor device and method of manufacturing a semiconductor device is disclosed in which a SONOS-type dielectric may include a charge storing dielectric (206) that includes at least one charge trapping dielectric layer (212) formed within. A charge trapping dielectric layer (212) may be a silicon-rich silicon nitride layer that may trap charge that could otherwise tunnel through a charge storing dielectric (206). A method may include forming a tunneling dielectric (302), forming a first portion of a charge storing layer (304-0), forming a charge trapping layer (306), forming a second portion of a charge storing layer (304-1), and forming a top dielectric (308).
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申请公布号 |
US6709928(B1) |
申请公布日期 |
2004.03.23 |
申请号 |
US20010920378 |
申请日期 |
2001.07.31 |
申请人 |
CYPRESS SEMICONDUCTOR CORPORATION |
发明人 |
JENNE FRED;LANCASTER LOREN THOMAS |
分类号 |
H01L21/8246;H01L27/115;H01L29/423;H01L29/788;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/8246 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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