Semiconductor devices and methods for manufacturing the same

摘要

A semiconductor device may include a first wiring layer 30, an interlayer dielectric layer 40 formed above the first wiring layer 30, a second wiring layer 50 formed above the interlayer dielectric layer 40, a through hole 60 formed in the second wiring layer 50 and the interlayer dielectric layer 40, and a contact layer 70 that is formed in the through hole 60 and electrically connects the first wiring layer 30 and the second wiring layer 50.