| 摘要 |
An SRAM includes first and second access PMOS transistors in an N well region; first and second driver NMOS transistors in a P well region; a word line; and first and second bit lines. Active regions extend in the same direction, polysilicon wirings for forming gates of each of the MOS transistors extend in the same direction, and drains of the first and second access PMOS transistors are connected to drains of the first and second driver NMOS transistors using first metal wirings without interposing the polysilicon wirings forming the gates of the first and second driver NMOS transistors therebetween, respectively.
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