| 摘要 |
<PICT:1000264/C6-C7/1> A protective layer is formed on the surface of a semi-conductor body including a PN junction by an anodic treatment in an electrolyte produced by boiling a mixture of boric acid, glycol and aqueous ammonia. In the embodiment a rectifier element consisting of a molybdenum carrier plate 2 connected by aluminium alloy 3 to a silicon wafer 4 having an alloyed-in electrode 5 of a gold antimony eutectic, is placed on a gold base plate 6 and within a hollow insulating cylinder 7, e.g. of P.T.F.E., with the electrode 5 lying within a further metallic cylinder 8 supported by distance pieces 9 of plastics material and covered by a heap of fused cane sugar 10 or a wafer of plastics material. The rectifier and sugar are then immersed in electrolyte and electrical connections made as in the Figure. Operational details for producing the required oxide film are given. The semi-conductor surface may be acid etched prior to the anodic treatment. |
