发明名称 |
Scalable stack-type DRAM memory structure and its manufacturing methods |
摘要 |
The scalable stack-type DRAM memory structure of the present invention comprises a scalable DRAM transistor structure and a scalable DRAM capacitor structure. The scalable DRAM transistor structure comprises a plurality of transistor-stacks, a plurality of common-drain regions, and a plurality of source regions being formed over a shallow-trench-isolation structure without a dummy-transistor structure by using a spacer-formation technique. The scalable DRAM capacitor structure comprises a plurality of rectangular tube-shaped cavities being formed over thin fourth conductive islands to form a high-capacity DRAM capacitor for each of DRAM cells; and a plurality of planarized conductive contact-islands over planarized third conductive islands being patterned and simultaneously etched with a plurality of bit-lines for forming a contactless DRAM memory. The cell size of a DRAM cell is scalable and can be made to be smaller than 6F<2>.
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申请公布号 |
US6710398(B2) |
申请公布日期 |
2004.03.23 |
申请号 |
US20020200248 |
申请日期 |
2002.07.23 |
申请人 |
INTELLIGENT SOURCES DEVELOPMENT CORP. |
发明人 |
WU CHING-YUAN |
分类号 |
H01L21/02;H01L21/8242;H01L27/108;H01L29/788;(IPC1-7):H01L29/788 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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