| 摘要 |
A method is described for producing a conducting connection through insulating layers by way of a contact hole and conducting materials with which the contact hole is filled. The method permits the production of a contact hole resembling the shape of a wineglass, into which conducting filling material and barrier layers can be inserted without the known problems such as void formation, overetching trenches, and dielectric close-off. It is possible in this way, for example, to produce an electric connection between the diffusion zone of a selection transistor and the lower electrode of a storage capacitor of large-scale integrated DRAM and FeRAM components with the aid of only a few mask steps.
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