发明名称 |
Plasma heating of a substrate with subsequent high temperature etching |
摘要 |
We have discovered a method of reducing the effect of material sputtered/etched during the preheating of a substrate. One embodiment of the method pertains to preheating a substrate which includes a metal-containing layer which is to be pattern etched subsequent to preheating. The method includes exposing the substrate to a preheating plasma which produces a deposit or residue during preheating which is more easily etched than said metal-containing layer during the subsequent plasma etching of said metal-containing layer.
|
申请公布号 |
US6709609(B2) |
申请公布日期 |
2004.03.23 |
申请号 |
US20000747667 |
申请日期 |
2000.12.22 |
申请人 |
APPLIED MATERIALS INC. |
发明人 |
HWANG JENG H.;CHEN XIAOYI |
分类号 |
C23F4/00;H01L21/3213;(IPC1-7):C03C25/68;B44C1/22 |
主分类号 |
C23F4/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|