发明名称 Plasma heating of a substrate with subsequent high temperature etching
摘要 We have discovered a method of reducing the effect of material sputtered/etched during the preheating of a substrate. One embodiment of the method pertains to preheating a substrate which includes a metal-containing layer which is to be pattern etched subsequent to preheating. The method includes exposing the substrate to a preheating plasma which produces a deposit or residue during preheating which is more easily etched than said metal-containing layer during the subsequent plasma etching of said metal-containing layer.
申请公布号 US6709609(B2) 申请公布日期 2004.03.23
申请号 US20000747667 申请日期 2000.12.22
申请人 APPLIED MATERIALS INC. 发明人 HWANG JENG H.;CHEN XIAOYI
分类号 C23F4/00;H01L21/3213;(IPC1-7):C03C25/68;B44C1/22 主分类号 C23F4/00
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