| 摘要 |
PURPOSE: A method for fabricating a liquid crystal display thin film transistor is provided to have a good contact resistance and a high electron mobility on a channel by removing a potential barrier on a current path. CONSTITUTION: A gate electrode(120) is formed on a transparent substrate(110), and a gate insulation film(130) is formed on the substrate where the gate electrode is formed. A source electrode(160) and a drain electrode(165) are formed by depositing and patterning a metallic film on the gate insulation film. A separated source electrode and a separated drain electrode are formed, by forming a metallic film on a front of the substrate where the gate insulation film is formed and then patterning it. An active layer(140) is formed over a part of the source electrode and the drain electrode to cover a separation area of the source electrode and the drain electrode. A protection film(170) is formed to cover the active layer and the source electrode and the drain electrode. A contact hole is formed to reveal the drain electrode on the protection film formed on the drain electrode. And a pixel electrode(180) contacting the drain electrode is formed through the contact hole on the protection film. |
