发明名称 |
IN-SITU PLASMA ETCH FOR TERA HARD MASK MATERIALS |
摘要 |
PURPOSE: Provided is a method for removing carbon from TERA materials, which in turn renders the TERA material etchable in a plasma chemistry compatible with a fluorine based etching system. CONSTITUTION: A TERA material is exposed to a plasma containing an effective amount of nitrogen. The nitrogen binds the carbon in the TERA material, forming volatile species and thereby removing the carbon from the TERA material. The plasma may further contain oxygen or fluorine. If the plasma contains fluorine, the plasma preferably has a F/(N+O) ratio less than 0.25 or 0.1.
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申请公布号 |
KR20040024837(A) |
申请公布日期 |
2004.03.22 |
申请号 |
KR20030059775 |
申请日期 |
2003.08.28 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
WISE RICHARD S.;DESHPANDE SADANAND V.;YAN WENDY;ALLEN SCOTT D.;MAHOROWALA ARPAN P. |
分类号 |
H01L21/3065;G03F7/09;H01L21/308;H01L21/311;H01L21/768;(IPC1-7):H01L21/306 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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