METHOD FOR MANUFACTURING SOI WAFER

摘要

PURPOSE: A method for manufacturing an SOI(Silicon On Insulator) is provided to shorten annealing time by using hydrogen ion-implantation processing. CONSTITUTION: An oxide layer(11) is formed on a donor wafer(10). A hydrogen ion implanted layer(12) is formed in the donor wafer by implanting hydrogen ions using ion implantation energy of 10-100 KeV, wherein the depth of the hydrogen ion implanted layer(12) is 1000-10000Å. A handle wafer(20) is then attached to the donor wafer, thereby forming a junction wafer(30). Then, the hydrogen ion implanted layer is isolated by annealing under the temperature of 400-450°C for 5-30 minute.