METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE WITH BURIED BIT LINE

摘要

PURPOSE: A method for manufacturing a semiconductor device with a buried bit line is provided to be capable of restraining overlay failure between bit line and bit line contact and preventing collapse of the bit line. CONSTITUTION: The first interlayer dielectric(35) is formed on a semiconductor substrate(31). A plurality of plugs(36,37) are formed to connect the substrate through the first interlayer dielectric. The second interlayer dielectric(38) is formed on the resultant structure. A dual damascene pattern(43) including a hole pattern and a line pattern is formed by selectively etching the second interlayer dielectric. A bit line(45) is then buried in the dual damascene pattern.