| 摘要 |
PURPOSE: To provide a bias sputtering film deposition method and an apparatus therefor by which a film having a satisfactory film thickness distribution can be deposited particularly to the side wall part in a coating face with a fine and complicated shape such as a contact hole, a through hole and a wiring groove. CONSTITUTION: A bias sputtering film deposition system composed by providing the inside of a vacuum chamber 1 having a sputtering gas introduction port 3 and a vacuum exhaust port 2 with a sputtering cathode 4 and a substrate stage 5 individually mounted with a target 6 and a substrate 7 confronted each other is connected with a power source 9 in which output is variable to the substrate stage 5 and a control system 10. The control system 10 is previously allowed to memorize a substrate bias voltage value at the time when a cathode voltage is controlled to the prescribed one, and further, the substrate and the target are separated in a prescribed distance, and the film thickness distribution of a thin film on each surface corresponding to the substrate bias voltage value as reference data. In film deposition on each surface, the substrate bias voltage value almost uniformizing the film thickness is selected from the reference data, and a bias voltage function is obtained with the same value as a variable. The output of the power source is controlled by the function.
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