SEMICONDUCTOR DEVICE FABRICATING PROCESS

摘要

PURPOSE: To provide a semiconductor device fabricating process capable of forming more minute circuit patterns and fabricating a high-density device by using a lithography technique. CONSTITUTION: In circuit patterns with minute patterns and minute spaces, a hard mask layer is patterned by using first patterns obtained by merging the minute spaces and then the hard mask layer is shrunk. Next, the hard mask layer is patterned by using second patterns obtained based on the minute spaces and finally an underlaying layer is formed with the circuit patterns by using the hard mask layer as a mask.