| 摘要 |
A process for the manufacture of doped silicon semi-conductors comprises decomposing silane, mixed with a hydride of boron arsenic or phosphorus, on to an electrically heated silicon mono-crystal within, and electrically insulated from, a closed reactor in the presence of added hydrogen which inhibits the gas phase reaction.ALSO:A process for the manufacture of doped silicon or germanium in sheet or band form comprises decomposing silane or germane mixed with a hydride of boron, arsenic or phosphorus on to an electrically heated band of Ta, Nb, Mo, or W within, and electrically insulated from, a closed reactor in the presence of added hydrogen which inhibits the gas phase reaction. P-N junctions may be made by alternate use of N and P type impurities. Single crystals of doped semi-conductor may be made by using crystals of Si or Ge as a base for the decomposition. In one form of the invention a doped layer is coated on to a metal substrate having in its composition, or coated thereon, a doping impurity of the opposite type, thus giving a P-N junction by diffusion. |
