发明名称 WASHING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a washing method to wash an object without damaging the object having a microstructure. SOLUTION: By this washing method, an object such as a micromachine which forms a beam structure by etching a sacrificial layer is washed using super-critical carbon dioxide added non-ionic surfactant as washing liquid. The added non-ionic surfactant is, for example, nonyl phenol polyoxyethylene ether shown by formula; the number of mol is 2-4 in the formula of ethyleneoxide (CH<SB>2</SB>-CH<SB>2</SB>-O) in the above formula. The adding quantity of the non-ionic surfactant is, for example, the adding quantity with which the concentration range of the non-ionic surfactant in the super-critical carbon dioxide at 40<SP>0</SP>C, 8MPa is made 0.01mol% or more and 2mol% or less, desirably 0.05mol% or more and 1mol% or less. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004088095(A) 申请公布日期 2004.03.18
申请号 JP20030276519 申请日期 2003.07.18
申请人 SONY CORP 发明人 SAGA KOICHIRO
分类号 B08B3/08;C11D1/52;C11D1/68;C11D1/70;C11D1/72;C11D1/74;C11D3/04;C11D3/37;C11D17/00;H01L21/304;(IPC1-7):H01L21/304 主分类号 B08B3/08
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