发明名称 |
High temperature anisotropic etching of multi-layer structures |
摘要 |
An alternative etching chemistry which can provide inherently anisotropic etching and eliminate notch formation without the need for heavy polymer deposition is provided by the present invention. The etch is performed with a combination of HBr and N2 at substrate temperatures greater than approximately 160° C. to provide an essentially notch-free and carbon-polymer free anisotropic etching process. The alternative etching chemistry allows for the production of substantially vertical features with smooth sidewalls in an Indium containing multiple layered structure in an ICP plasma etch system.
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申请公布号 |
US2004053506(A1) |
申请公布日期 |
2004.03.18 |
申请号 |
US20030616492 |
申请日期 |
2003.07.08 |
申请人 |
LEE YAO-SHENG |
发明人 |
LEE YAO-SHENG |
分类号 |
H01L21/3065;C23F1/00;H01L21/302;H01L21/306;H01L21/461;(IPC1-7):H01L21/461 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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